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PHB130N03LT

NXP
Part Number PHB130N03LT
Manufacturer NXP
Description TrenchMOS transistor Logic level FET
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhan...
Datasheet PDF File PHB130N03LT PDF File

PHB130N03LT
PHB130N03LT

Overview
Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.
The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV.
It is intended for use in DC-DC converters and general purpose switching applications.
PHB130N03LT QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC)1 Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX.
30 75 187 175 6 UNIT V A W ˚C mΩ PINNI...


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