PH3230

PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 03 — 25 June 2003 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 (LFPAK) package. Product availability: PH3230 in SOT669 (LFPAK). 2. Features s s s s Logic level compatible Low drive current High density mounting Very low on-state resistance. 3. Applications s DC-to-DC converters s Computer motherboards s Switched mode power supplies. 4. Pinning information Table 1: Pin 1,2,3 4 mb Pinning - SOT669 (LFPAK), simplified outline and symbol Description source (s) mb Simplified outline Symbol d gate (g) mounting base, connected to drain (d) 1 2 3 4 MBL286 g Top view MBL288 s1 s2 s3 SOT669 (LFPAK) Philips Semiconductors PH3230 N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 °C Tmb = 25 °C Tmb = 25 °C VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 4.5 V; ID = 25 A; Tj = 25 °C Typ 3.2 5.5 Max 30 50 42 150 3.7 7.3 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj ISM IDS(AL)R drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipati...