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PH2920 Dataheets PDF



Part Number PH2920
Manufacturers NXP
Logo NXP
Description N-channel enhancement mode field-effect transistor
Datasheet PH2920 DatasheetPH2920 Datasheet (PDF)

PH2920 N-channel enhancement mode field-effect transistor M3D748 Rev. 01 — 13 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 (LFPAK) package. Product availability: PH2920 in SOT669 (LFPAK). 1.2 Features s Low thermal resistance s Low gate drive current s SO8 equivalent area footprint s Low on-state resistance. 1.3 Applications s DC-to-DC converters s Portable appliances s Switched mode power supplies s Notebook com.

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PH2920 N-channel enhancement mode field-effect transistor M3D748 Rev. 01 — 13 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 (LFPAK) package. Product availability: PH2920 in SOT669 (LFPAK). 1.2 Features s Low thermal resistance s Low gate drive current s SO8 equivalent area footprint s Low on-state resistance. 1.3 Applications s DC-to-DC converters s Portable appliances s Switched mode power supplies s Notebook computers. 1.4 Quick reference data s VDS ≤ 20 V s Ptot ≤ 62.5 W s ID ≤ 60 A s RDSon ≤ 2.9 mΩ 2. Pinning information Table 1: Pin 1,2,3 4 mb Pinning - SOT669 (LFPAK), simplified outline and symbol Description source (s) mb Simplified outline Symbol d gate (g) drain (d) g 1 2 3 4 MBL286 Top view MBL288 s1 s2 s3 SOT669 (LFPAK) Philips Semiconductors PH2920 N-channel enhancement mode field-effect transistor 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Conditions Tj = 25 to 150 °C Min −55 −55 Max 20 ±20 60 240 62.5 +150 +150 60 240 Unit V V A A W °C °C A A Source-drain diode 9397 750 11119 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 — 13 June 2003 2 of 12 Philips Semiconductors PH2920 N-channel enhancement mode field-effect transistor 120 03ah31 120 Ider (%) 80 03am08 Pder (%) 80 40 40 0 0 50 100 150 200 Tmb (°C) 0 0 60 120 Tmb (°C) 180 P tot P der = ---------------------- × 100 % P ° tot ( 25 C ) ID I der = ------------------- × 100 % I ° D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. 103 ID (A) 03am09 RDSon = VDS / ID 102 tp = 100 µ s 1 ms DC 10 100 ms 10 ms 1 10-1 1 10 VDS (V) 102 Tmb = 25 °C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 11119 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 — 13 June 2003 3 of 12 Philips Semiconductors PH2920 N-channel enhancement mode field-effect transistor 4. Thermal characteristics Table 3: Rth(j-mb) Thermal characteristics Conditions Min Typ Max Unit 2 K/W thermal resistance from junction to mounting base Symbol Parameter 4.1 Transient thermal impedance 10 Zth(j-mb) (K/W) 1 0.2 0.1 0.05 10-1 0.02 03am10 δ = 0.5 single pulse 10-2 10-3 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 11119 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 — 13 June 2003 4 of 12 Philips Semiconductors PH2920 N-channel enhancement mode field-effect transistor 5. Characteristics Table 4: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IGSS RDSon gate-source threshold voltage drain-source leakage current gate-source leakage current drain-source on-state resistance ID = 10 mA; VGS = 0 V ID = 1 mA; VDS = VGS; Figure 9 VDS = 20 V; VGS = 0 V; Tj = 25 °C VGS = ± 16 V; VDS = 0 V VGS = 10 V; ID = 30 A; Figure 7 and 8 VGS = 4.5 V; ID = 30 A Dynamic characteristics gfs Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VSD trr forward transconductance total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain (diode forward) voltage IS = 60 A; VGS = 0 V; Figure 12 reverse recovery time IS = 60 A; dIS/dt = −50 A/µs; VGS = 0 V VDD = 10 V; ID = 30 A; VGS = 10 V; RG = 4.7 Ω VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 11 VDS = 10 V; ID = 30 A ID = 60 A; VDD = 10 V; VGS = 10 V; Figure 13 45 75 60 15 11 S nC nC nC pF pF pF ns ns ns ns V ns 20 1 1.75 0.06 2.6 4.3 2.5 1 10 2.9 5.8 V V µA µA mΩ mΩ Conditions Min Typ Max Unit 4200 1200 650 20 85 95 20 0.85 50 1.1 - Source-drain (reverse) diode 9397 750 11119 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 — 13 June 2003 5 of 12 Philips Semiconductors PH2920 N-channel enhancement mode field-effect transistor 130 ID (A) 104 03am11 10 V 4V 100 ID (A) 75 03am12 3.5 V 78 50 52 3V 26 150 °C 0 0 2 4 VDS (V) 6 0 0 1 2 3 VGS (V) 4 Tj = 25 °C 25 Tj = 25 °C Tj = 25 °C and 150 °C; VDS > ID x RDSon Fig 5. Outp.


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