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Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty PH2729-65M ...
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Radar Pulsed Power
Transistor, 65W, loops Pulse, 10% Duty PH2729-65M 2.7 - 2.9 GHz
I .300
v2.00 (
Features
NPN Silicon Microwave Power
Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package
(22.86) -:i~~~)-j
Absolute Maximum Ratings at 25°C
Parameter 1 Collector-Emitter
rr--
1 Symbol Voltage 1 V,,, V ES0 L / P,,, TJ T STG
1 1
Rating 65 3.0 8.0
1 Units
1
I v I
V
Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation
A
I
330 200 -65 to +200
I w I
“C
UNLESS CT;ERVISE NOTED, TDLERANCES A4E INCHIS :WILLIME?;RS 5.005’ :.13MH)
JunctionTemperature Storage Temperature
“C
Electrical Characteristics
Parameter Collector-Emitter i Collector-Emitter Breakdown Voltaoe Leakage Current
at 25°C
Symbol BV,,, I lCES R TWC; PIN G. a.5 1 Min 65 ) Max Units V I,=50 mA 1 V,,=36V 1 Vo=36 V,,=36 V-,=36 1 V,,=36 V,,=36 V,,=36 V, PO,=65 V. PO,=65 V, PA,,=65 V, PO,=65 V, Poe65 V, Poe65 W, F=2.7.2.6,2.9 W, F=2.7,2.6,2.9 W. F=2.7,2.6,2.9 W, F=2.7,2.6,2.9 W. F=2.7,2.8,2.9 W. F=2.7,2.8,2.9 W, F=2.7,2.6,2.9 GHz GHz GHr GHz GHz GHz GHz Test Conditions
7.5 1 mA
0.45 9.0 1 “cJ’.t’ w dB % dB -
I
Thermal Resistance Input Power Power Gain
I-Collector
Efficiency
I
rlc
RL VSWR-T VSWR-S
I 40 I 9 2:l l.S:l
Input Return Loss Load Mismatch Tol...
