PH2729-25M

M/A-COM PHI, INC. PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100µs PULSE, 10% DUTY OUTLINE DRAWING FEATURES ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry ∗ Diffused Emitter Ballasting Resistors ∗ Gold Metalization System ∗ Internal Input and Output Impedance Matching ∗ Hermetic Metal/Ceramic Package ABSOLUTE MAXIMUM RATINGS AT 25°C Parameter Symbol Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25°C Storage Temperature Junction Temperature VCES VEBO IC PTOT TSTG Tj 65 3.0 4.0 120 -65 to +200 200 Units V V A W °C °C ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stability BVCES ICES RTH(JC) PO GP 65 25 9.2 45 6 - Max 1.5 1.25 3:1 1.5:1 Units V mA °C/W W dB % dB IC=10mA VCE=40V Test Conditions VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz η RL VSWR-T VSWR-S BROADBAND TEST FIXTURE IMPEDANCE F (GHz) Z IF (Ω) Z OF (Ω) 2.70 2.80 2.90 38 - j14.4 35 - j16.3 33 - j17....