PH2729-150M

PH2729-150M Radar Pulsed Power Transistor—150 Watts 2.7-2.9 GHz, 100µs Pulse, 10% Duty Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metallization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Outline Drawing1 Description M/A-COM’s PH2729-150M is a silicon bipolar NPN transistor specifically designed for use in high efficiency, common base, Class C microwave power amplifiers. It is ideally suited for SBand radar and pulsed power applications where the highest gain and saturated power are required. The flanged ceramic package provides for excellent thermal and hermetic properties, which when combined with M/A-COM’s mature transistor fabrication technology results in the highest reliability available. Notes: (unless otherwise specified) 1. Tolerances are: inches ± .005” (millimeters ± 0.13mm) Absolute Maximum Rating at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation Storage Temperature Junction Temperature Symbol VCES VEBO IC PD TSTG TJ Rating 65 3.0 15.0 500 -65 to +200 200 Units V V A W °C °C Electrical Specifications at 25°C= Symbol BVCES ICES RTH(JC) POUT GP η RL OD-S VSWR-T VSWR-S Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Output Power Power Gain Collector Efficiency ...