PH2222A

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH2222A NPN switching transistor Product specification Supersedes data of 1997 Sep 04 1999 Apr 27 Philips Semiconductors Product specification NPN switching transistor FEATURES High current (max. 600 mA) Low voltage (max. 40 V). APPLICATIONS Switching and linear amplification. DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic package. PNP complement: PH2907A. 1 handbook, halfpage 2 3 PH2222A PINNING PIN 1 2 3 emitter base collector DESCRIPTION 3 2 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 75 40 6 600 800 200 500 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 27 2 Philips Semiconductors Product specification NPN switching transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 6...