an AMP comoanv
Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz
Features
NPN Silicon Microwave Power Transistor Desig...
an AMP comoanv
Wireless Bipolar Power
Transistor, 1.78 - 1.90 GHz
Features
NPN Silicon Microwave Power
Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter Ballasting Gold Metallization System
4W
PH1819-4N
v2.00
,975 .‘24 77, i
.
Absolute Maximum Ratings at 25°C
Parameter Collector-Base Voltage Collector-EmitterVoltage Emitter-Base Voltage Collector Current Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance Symbol Vcm VCES VES0 ‘c PO TJ TST0 eJC Rating
60
60
Units V V V 1 A W “C “C
“C/W
UN-ESS OTHERWlSE ND-ED, TOLERANZES ARE :M1, L,HETERS i . J _ ,253~.DlO , c&43*.25) .0045? OOl:,
3.0 0.7
I;;;;:;;) +’
1 ;
; I
’
1 I
--A-; ,110 :2.79> t
19.5 200 -55 to +150
7.5
,
INCt-3 t COY
=,13MM)
Electrical Characteristics
Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Forward Current Gain Power Gain Collector Efficiency Input Return Loss Load MismatchTolerance 3rd Order IMD
at 25°C
Symbol BV,,, ICES BVcEo BV,,, hFE GP
%
Min 60
Max 2.0
Units V mA V V
I,=5 mA
Test Conditions
V,,=24 V
I,=5 mA
20 3.0
15
120
1,=2.5 mA V,,=5 V, I,=O.l A V,:=26 V, I,,-,=20mA, PO,,.=4W PEP, F=1850 MHz, AF=lOO kHz V&6 V, l,c=20 mA, Po,,r=4 W PEP, F=1850 MHz, AF=lOO kHz W PEP, Ft1850 MHz, AF=lO...
