PH1819-45A

Wireless Power Transistor 45 Watts 1805-1880 MHz PH1819-45A PH1819-45A Wireless Power Transistor 45 Watts, 1805 - 1880 MHz Features NPN Silicon Microwave Power Transistor rd -28 dBc Typical 3 IMD at 45 Watts PEP Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System Outline Drawing 1 Description M/A-COM’s PH11819-45A is a high efficiency silicon bipolar NPN transistor intended for use as a common emitter class AB stage in power amplifiers that operate in the 1805 to 1880 MHz range. This transistor features internal input and output impedance matching, diffused emitter ballasting and gold metalization. The PH1819-45A is packaged in a low cost, non-hermetic ceramic package which has a very low thermal impedance. Note: (unless otherwise specified) 1. Tolerances are: inches ± 0.005” (millimeters ± 0.13mm) BroadBand Fixture Impedance Absolute Maximum Rating at 25°C Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Storage Temperature Junction Temperature Thermal Resistance Symbol VCEO VCES IEBO IC PD Tstg TJ θjc Rating 20 65 3.0 4.0 117 -55 to +150 200 1.5 Units V V V A W °C °C °C/W F (MHz) 1805 1842 1880 Z IF (Ω) 3.3 + j5.7 3.1 + j5.6 2.9 + j5.4 Z OF (Ω) 4.1 + j0.3 4.5 + j0.2 4.8 + j0.0 Z INPUT NETWORK Z IF OF OUTPUT NETWORK Electrical Specifications at 25°C Symbol hFE GP ηC RL VSWR-T Parameter DC Forward Current Gai...