PH1090-175L

Avionics Pulsed Power Transistor 175 Watts, 1030-1090 MHz, 250µs Pulse, 10 % Duty PH1090-175L PH1090-175L Avionics Pulsed Power Transistor - 175 Watts, 1030-1090 MHz, 250µs Pulse, 10% Duty Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Outline Drawing 1 Absolute Maximum Rating at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT Tstg Tj Rating 80 3.0 10.5 375 -65 to +200 200 Units V V A W °C °C Notes: (unless otherwise specified) 1. Tolerances are: inches ± .005” (millimeters ± 0.13mm) TEST FIXTURE INPUT CIRCUIT TEST FIXTURE OUTPUT CIRCUIT Broadband Test Fixture Impedance F (MHz) 1030 1090 Z IF (Ω ) 3.4 + j5.6 3.2 + j5.1 Z OF (Ω ) 2.3 + j2.2 2.3 + j1.7 50Ω ZIF ZOF 50Ω Electrical Specifications at 25°C Symbol BVCES ICES RTH(JC) PO GP η RL VSWR-T VSWR-S Parameter Collector-Emitter Breakdown Collector-Emitter Leakage Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stability Test Conditions IC=125mA VCE=45 V VCC=45 V, Pin=26 W, f=1090 MHz VCC=45 V, Pin=26 W, f=1090 MHz VCC=45 V, Pin=26 W, f=1090 MHz VCC=45 V, Pin=...