= an AMP
-----
company
Wireless Bipolar Power Transistor, 850 - 960 MHz
Features
Designed for Linear Amplifier Applic...
= an AMP
-----
company
Wireless Bipolar Power
Transistor, 850 - 960 MHz
Features
Designed for Linear Amplifier Applications Class AB: -3OdBc Typ 3rd IMD at 15 Watts PEP Class A: +53dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter Ballasting
35W
PH081 o-35
.100*.010 (2.54t.25) I t .230 c5.?4)
Absolute‘ Maximum Ratings at 25°C
Electrical Characteristics
at 25°C
UNLESS
OTHERWISE
NOTED, TOLERANCES
ARE
INCHES f.005 ,.HILuNETERS tlsnn,
Typical Optimum Device Impedances
F(MHz) 600 650 900 q#4 1 .O + j3.7 1.9 1.3 + j4.3 j4.0 ZOAim 2.1 + j0.9 1.6+jO.4 1.6 + j0.7 i.i”Tw
- 2LOA
960
3.0 + j2.7
1.7 + jO.1
ZIN
Specifications
Subject
to Change
Without
Notice.
Wireless Bipolar Power
Transistor, 35W
PH0810-35 v2.00
Typical Broadband Performance
Curves
OUTPUT
75
GAIN-EFFICIENCY
l5 6
14
vs FREQUENCY
mA
POWER
vs COLLECTOR
VOLTAGE
Po,,=35 W Vcc=24 V I,,=200
1,,=200 mA F=900 MHz
11
P,,r0.75 w
_
10 1 * 850 900
' 25 960 72 14 16 18 20 22 24 26
FREQUENCY (MHz)
COLLECTOR VOLTAGE (V)
GAIN vs POWER OUTPUT
F=900 MHz V,,=24 V 60 ,
C,, vs COLLECTOR
F=l.OMHz
VOLTAGE
I
24
27
30
33
36
39
42
45
48
5
10
15 v,, W)
20
25
30
P,, Wm)
IMD vs PoUT
Vcc=24 V I,,=200 mA F1=900 MHz F2=900.1 MHz
Claaa A6 9 -15 r
IMD vs P,,
Vcc=20 V lcoz2.5 A F1=900 MHz F2z900.1
Clam A
MHz
6 ii z 3
6 B 2 3
0 24 28 32 36 40 44 48 24 26 32 36 40 44 48
0
P&PEP)
in dBm
P&PEP)
in dBm
Wireless Bipolar Power Tr...