SILICON MOS FET POWER AMPLIFIER
MITSUBISHI RF POWER MODULE
M68739M
SILICON MOS FET POWER AMPLIFIER, 155-168MHz, 7W, FM PORTABLE RADIO
OUTLINE DRAWING
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Description
MITSUBISHI RF POWER MODULE
M68739M
SILICON MOS FET POWER AMPLIFIER, 155-168MHz, 7W, FM PORTABLE RADIO
OUTLINE DRAWING
30±0.2 26.6±0.2 21.2±0.2
Dimensions in mm
BLOCK DIAGRAM
2
3
2-R1.5±0.1
1 5 1 2 3 4
4 5
φ 0.45
6±1 13.7±1 18.8±1 23.9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤2.5V, ZG=ZL=50Ω f=155-168MHz, ZG=ZL=50Ω f=155-168MHz, ZG=ZL=50Ω f=155-168MHz, ZG=ZL=50Ω Ratings 16 3 30 10 -30 to +100 -40 to +110 Unit V V mW W °C °C
Note. Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted)
Symbol f PO ηT 2fO ρin Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 155 7 50 Max 168 Unit MHz W % dBc -
VDD=9.6V, VGG=2.5V, Pin=20mW ZG=50Ω, VDD=4.8-13.2V, Load VSWR <4:1 VDD=13.2V, Pin=20mW, PO=7W (VGG Adjust), ZL=20:1
-20 4 No parasitic oscillation No degradation or destroy
Note. Above parameters, ratings, limits and test conditions are subject to change.
Nov. ´97
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