Document
January 14, 2003 Rev.0.7
Preliminary
Notice: This is not final specification. Some parametric limits are subject to change.
DESCRIPTION
The M5M5T5636UG is a family of 18M bit synchronous SRAMs organized as 524288-words by 36-bit. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Mitsubishi's SRAMs are fabricated with high performance, low power CMOS technology, providing greater reliability. M5M5T5636UG operates on 2.5V power/ 1.8V I/O supply or a single 2.5V power supply and are 2.5V CMOS compatible.
FEATURES
• Fully registered inputs and outputs for pipelined operation • Fast clock speed: 250, 225, and 200 MHz • Fast access time: 2.6, 2.8, 3.2 ns • Single 2.5V -5% and +5% power supply VDD • Separate VDDQ for 2.5V or 1.8V I/O • Individual byte write (BWa# - BWd#) controls may be tied
LOW • Single Read/Write control pin (W#) • CKE# pin to enable clock and suspend operations • Internally self-timed, registers outputs eliminate the need
to control G# • Snooze mode (ZZ) for power down • Linear or Interleaved Burst Modes • Three chip enables for simple depth expansion • JTAG boundary scan support
MITSUBISHI LSIs
M5M5T5636UG – 25,22,20
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
APPLICATION
High-end networking products that require high bandwidth, such as switches and routers.
FUNCTION
Synchronous circuitry allows for precise cycle control triggered by a positive edge clock transition.
Synchronous signals include : all Addresses, all Data Inputs, all Chip Enables (E1#, E2, E3#), Address Advance/Load (ADV), Clock Enable (CKE#), Byte Write Enables (BWa#, BWb#, BWc#, BWd#) and Read/Write (W#). Write operations are controlled by the four Byte Write Enables (BWa# - BWd#) and Read/Write(W#) inputs. All writes are conducted with on-chip synchronous self-timed write circuitry.
Asynchronous inputs include Output Enable (G#), Clock (CLK) and Snooze Enable (ZZ). The HIGH input of ZZ pin puts the SRAM in the power-down state.The Linear Burst order (LBO#) is DC operated pin. LBO# pin will allow the choice of either an interleaved burst, or a linear burst.
All read, write and deselect cycles are initiated by the ADV LOW input. Subsequent burst address can be internally generated as controlled by the ADV HIGH input.
Package 165(11x15) bump BGA Body Size (13mm x 15mm) Bump Pitch 1.0mm
PART NAME TABLE
Part Name M5M5T5636UG - 25
Access 2.6ns
Cycle 4.0ns
Active Current (max.)
560mA
Standby Current (max.)
30mA
M5M5T5636UG - 22 2.8ns
4.4ns
500mA
30mA
M5M5T5636UG - 20 3.2ns
5.0ns
440mA
30mA
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Preliminary M5M5T5636UG REV.0.7
BUMP LAYOUT(TOP VIEW)
MITSUBISHI LSIs
M5M5T5636UG – 25,22,20
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
165bump-BGA 1 2 3 4 5 6 7 8 9 10 11
A NC A7 E1# BWc# BWb# E3# CKE# ADV A17 A8 NC
B NC A6 E2 BWd# BWa# CLK W# G# A18 A9 NC
C DQPc NC VDDQ VSS VSS VSS VSS VSS VDDQ NC DQPb
D DQc DQc VDDQ VDD VSS VSS VSS VDD VDDQ DQb DQb
E DQc DQc VDDQ VDD VSS VSS .