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M5M417400CTP-6 Dataheets PDF



Part Number M5M417400CTP-6
Manufacturers Mitsubishi
Logo Mitsubishi
Description FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM
Datasheet M5M417400CTP-6 DatasheetM5M417400CTP-6 Datasheet (PDF)

MITSUBISHI LSIs M5M417400CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM DESCRIPTION This is a family of 4194304-word by 4-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer metal process combined with twin-well CMOS technology and a single-transistor dynamic storage stacked capacitor cell provide.

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MITSUBISHI LSIs M5M417400CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM DESCRIPTION This is a family of 4194304-word by 4-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer metal process combined with twin-well CMOS technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. PIN DESCRIPTION Pin name A0 ~ A11 DQ1 ~ DQ4 RAS CAS W OE VCC VSS Function Address inputs Data inputs / outputs Row address strobe input Column address strobe input Write control input Output enable input Power supply (+5V) Ground (0V) PIN CONFIGURATION (TOP VIEW) FEATURES RAS CAS access time (max.ns) Address access time (max.ns) OE access time (max.ns) Cycle time (min.ns) Power dissipation (typ.mW) Type Name access time (max.ns) M5M417400CXX-5,-5S M5M417400CXX-6,-6S M5M417400CXX-7,-7S 50 60 70 13 15 20 25 30 35 13 15 20 90 110 130 655 540 475 XX=J, TP • Standard 26 pin SOJ, 26 pin TSOP • Single 5V ± 10% supply • Low stand-by power dissipation 5.5mW(Max) ..................................CMOS Input level 2.2mW (Max)* ...............................CMOS Input level • Low operating power dissipation M5M417400Cxx-5,-5S .................... 800.0mW (Max) M5M417400Cxx-6,-6S .................... 660.0mW (Max) M5M417400Cxx-7,-7S .................... 580.0mW (Max) • Self refresh capability * self refresh current ................................ 200.0 µ A(Max) Outline 26P0D-B (300mil SOJ) • Fast-page mode, Read-modify-write, RAS-only refresh • CAS before RAS refresh, Hidden refresh capabilities Early-write mode and OE to control output buffer impedance • All inputs, output TTL compatible and low capacitance • 2048 refresh cycles every 32ms (A0 ~ A10) *Applicable to self refresh version (M5M417400CJ,TP-5S,-6S, -7S :option) only APPLICATION Main memory unit for computers, Microcomputer memory, Refresh memory for CRT Outline 26P3D-E (300mil TSOP) NC: NO CONNECTION 1 MITSUBISHI LSIs M5M417400CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM FUNCTION The M5M417400CJ,TP provide, in addition to normal read, write, and read-modify-write operations, a number of other functions, e.g., fast page mode, RAS-only refresh, and delayed-write. The input conditions for each are shown in Table 1. Table 1 Input conditions for each mode Inputs Operation Read Write (Early write) Write (Delayed write) Read-modify-write RAS-only refresh Hidden refresh Self refresh CAS before RAS refresh Stand-by RAS ACT ACT ACT ACT ACT ACT ACT ACT NAC CAS ACT ACT ACT ACT NAC ACT ACT ACT DNC W NAC ACT ACT ACT DNC NAC NAC NAC DNC OE ACT DNC DNC ACT DNC ACT DNC DNC DNC Row address APD APD APD APD APD APD DNC DNC DNC Column address APD APD APD APD DNC DNC DNC DNC DNC Input/Output Input OPN VLD VLD VLD DNC OPN DNC DNC DNC Output VLD OPN IVD VLD OPN VLD OPN OPN OPN Refresh YES YES YES YES YES YES YES YES NO Remark Fast page mode identical Note: ACT: active, NAC: nonactive, DNC: don’t care, VLD: valid, IVD: invalid, APD: applied, OPN: open BLOCK DIAGRAM 2 MITSUBISHI LSIs M5M417400CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IO Pd Topr Tstg Supply voltage Input voltage Output voltage Output current Power dissipation Operating temperature Storage temperature Ta = 25°C With respect to VSS Parameter Conditions Ratings -1 ~ 7 -1 ~ 7 -1 ~ 7 50 1000 0 ~ 70 -65 ~ 150 Unit V V V mA mW °C °C RECOMMENDED OPERATING CONDITIONS (Ta = 0 ~ 70°C, unless otherwise noted) (Note 1) Symbol VCC VSS VIH VIL Note 1: Supply voltage Supply voltage High-level input voltage, all inputs Low-level input voltage, all inputs All voltage values are with respect to VSS. Parameter Limits Min 4.5 0 2.4 -1.0** Nom 5 0 Max 5.5 0 5.5 0.8 Unit V V V V **: VIL(min.) is -2.0V when undershoot width is less than 25ns. (Undershoot width is with respect to VSS.) ELECTRICAL CHARACTERISTICS (Ta = 0 ~ 70°C, VCC = 5V ± 10%, VSS = 0V, unless otherwise noted) (Note 2) Symbol VOH VOL lOZ II ICC1(AV) High-level output voltage Low-level output voltage Off-state output current Input current Average supply current from VCC, operating (Note 3,4) ICC2 Supply current from VCC, stand-by Average supply current ICC3 (AV) from VCC, refreshing (Note 3) Average supply current ICC4 (AV) from VCC, Fast-Page-Mode (Note 3,4) Average supply current from VCC, ICC6 (AV) CAS before RAS refresh mode (Note 3) Note 2: 3: 4: M5M417400C-5,-5S M5M417400C-6,-6S M5M417400C-7,-7S (Note 5) M5M417400C-5,-5S M5M417400C-6,-6S M5M417400C-7,-7S M5M417400C-5,-5S M5M417400C-6,-6S M5M417400C-7,-7S M5M417400C-5,-5S M5M417400C-6,-6S M5M417400C-7,-7S Parameter IOH = -5.0mA IOL =.


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