MITSUBISHI LSls
M5K4164AL-12, -15
65 536-BIT (65 536-WORD BY I-BIT) DYNAMIC RAM
DESCRIPTION
This is a family of 65536-...
MITSUBISHI LSls
M5K4164AL-12, -15
65 536-BIT (65 536-WORD BY I-BIT) DYNAMIC RAM
DESCRIPTION
This is a family of 65536-word by l-bit dynamic RAMs, fabricated with the high performance N-channel silicongate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process technology and a single-
transistor dynamic storage cell privide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation. Multiplexed address inputs permit both a reduction in pins to the 16-pin zigzag inline package configuration and an increase in system densities. The M5K4164AL operates on a 5V power supply using the on-chip substrate bias generator.
PIN CONFIGURATION (TOP VIEW)
ADDRESS INPUT COLUMN ADDRESS
STROBE INPUT REFRESH INPUT WRITE CONT.ROL
INPUT
ADDRESS INPUTS
A6 !]
[~ --+ Q
DATA OUTPUT
faCAS --+ ~] 3:
Vss (OV)
REF --+
§]
'" L_
~ [§
<--
0
DATA INPUT
fl ~ [12W --+
Ao
~1
~ ".
.L-~
<--
- - ROW ADDRESS RAS STROBE INPUT
<-- A2 ADDRESS INPUT
A,
--+
lJ]
J"> .!.
IT)1
Vee (5V)
A7 --+ 1}1
A4 --+ l§J
'" [(4 <-- AS} ADDRESS
[(6 <-- A3 INPUTS
FEATURES
High speed
Type name
MSK4164AL-12 MSK4164AL-15
Access time (max) ins)
120
150
Cycle time {min) (ns)
220
260
Power dissipalion (typl (mWI
175
150
16 pin zigzag inline package Single 5V±1 0% supply Low standby power dissipation: 22mW (max) Low ...
