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M58WR064EB Dataheets PDF



Part Number M58WR064EB
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description 64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory
Datasheet M58WR064EB DatasheetM58WR064EB Datasheet (PDF)

M58WR064ET M58WR064EB 64 Mbit (4Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Package SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz – Asynchronous/ Synchronous Page Read mode – Random Access: 70, 80, 100 ns FBGA s PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Q.

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M58MR064D M58WR064EB M58WR064ET


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