M58CR064P

M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Package SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode : 54MHz – Asynchronous/ Synchronous Page Read mode – Random Access: 85, 90, 100, 120ns FBGA s PROGRAMMING TIME – 10µs by Word typical – Double/Quadruple Word Program option TFBGA56 (ZB) 6.5 x 10mm s MEMORY BLOCKS – Dual Bank Memory Array: 16/48 Mbit – Parameter Blocks (Top or Bottom location) s DUAL OPERATIONS – Program Erase in one Bank while Read in other – No delay between Read and Write operations s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M58CR064C: 88CAh – Bottom Device Code, M58CR064D: 88CBh – Top Device Code, M58CR064P: 8801h – Bottom Device Code, M58CR064Q: 8802h s BLOCK LOCKING – All blocks locked at Power up – Any combination of blocks can be locked – WP for Block Lock-Down s SECURITY – 128 bit user programmable OTP cells – 64 bit unique device number – One parameter block permanently lockable s s COMMON FLASH INTERFACE (CFI) 100,000 PROGRAM/ERASE CYCLES per BLOCK June 2003 1/70 M58CR064C, M58CR064D, M58CR064P, M58CR064Q TABLE OF CONTENTS SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figur...