16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories
M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB
16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories
PE4FEATURE...
Description
M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB
16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories
PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)
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Figure 1. Packages
HIGH PERFORMANCE – Access Time: 80, 90 and 100ns – 56MHz Effective Zero Wait-State Burst Read – Synchronous Burst Reads – Asynchronous Page Reads
PQFP80 (T)
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HARDWARE BLOCK PROTECTION – WP pin Lock Program and Erase
BGA
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SOFTWARE BLOCK PROTECTION – Tuning Protection to Lock Program and Erase with 64 bit User Programmable Password (M58BW016B version only)
LBGA80 (ZA) 10 x 8 ball array
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OPTIMIZED for FDI DRIVERS – Fast Program / Erase suspend latency time < 6µs – Common Flash Interface
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MEMORY BLOCKS – 8 Parameters Blocks (Top or Bottom) – 31 Main Blocks
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LOW POWER CONSUMPTION – 5µA Typical Deep Power Down – 60µA Typical Standby – Automatic Standby after Asynchronous Read
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ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code M58BW016xT: 8836h – Bottom Device Code M58BW016xB: 8835h
May 2003
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M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB
TABLE OF CONTENTS SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . ....
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