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M29W200BT Dataheets PDF



Part Number M29W200BT
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description 2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
Datasheet M29W200BT DatasheetM29W200BT Datasheet (PDF)

M29W200BT M29W200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Low Voltage Single Supply Flash Memory PRELIMINARY DATA s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 10µs per Byte/Word typical 7 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 4 Main Blocks 1 44 s s s s PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling an.

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M29W200BT M29W200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Low Voltage Single Supply Flash Memory PRELIMINARY DATA s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 10µs per Byte/Word typical 7 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 4 Main Blocks 1 44 s s s s PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin TSOP48 (N) 12 x 20mm SO44 (M) s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend Figure 1. Logic Diagram s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE LOW POWER CONSUMPTION – Standby and Automatic Standby 17 A0-A16 W E G RP M29W200BT M29W200BB 15 DQ0-DQ14 DQ15A–1 BYTE RB s VCC s s 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29W200BT: 0051h – Bottom Device Code: M29W200BB 0057h s s VSS AI02948 March 2000 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/22 M29W200BT, M29W200BB Figure 2. TSOP Connections A15 A14 A13 A12 A11 A10 A9 A8 NC NC W RP NC NC RB NC NC A7 A6 A5 A4 A3 A2 A1 1 48 A16 BYTE VSS DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 G VSS E A0 Figure 3. SO Connections 12 M29W200BT 37 13 M29W200BB 36 NC RB NC A7 A6 A5 A4 A3 A2 A1 A0 E VSS G DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 1 44 2 43 3 42 4 41 5 40 6 39 7 38 8 37 9 36 10 35 11 M29W200BT 34 12 M29W200BB 33 13 32 14 31 15 30 16 29 17 28 18 27 19 26 20 25 24 21 22 23 AI02945 RP W A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE VSS DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC 24 25 AI02944 Table 1. Signal Names A0-A16 DQ0-DQ7 DQ8-DQ14 DQ15A–1 E G W RP RB BYTE VCC VSS NC 2/22 Address Inputs Data Inputs/Outputs Data Inputs/Outputs Data Input/Output or Address Input Chip Enable Output Enable Write Enable Reset/Block Temporary Unprotect Ready/Busy Output Byte/Word Organization Select Supply Voltage Ground Not Connected Internally SUMMARY DESCRIPTION The M29W200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W200B is fully backward compatible with the M29W200. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. M29W200BT, M29W200BB Table 2. Absolute Maximum Ratings (1) Symbol TA Ambient Operating Temperature (Temperature Range Option 6) TBIAS TSTG VIO (2) VCC V ID Temperature Under Bias Storage Temperature Input or Output Voltage Supply Voltage Identification Voltage –40 to 85 –50 to 125 –65 to 150 –0.6 to 4 –0.6 to 4 –0.6 to 13.5 Parameter Ambient Operating Temperature (Temperature Range Option 1) Value 0 to 70 Unit °C °C °C °C V V V Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. 2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns during transitions. Table 3. Top Boot Block Addresses M29W200BT # 6 5 4 3 2 1 0 Size (Kbytes) 16 8 8 32 64 64 64 Address Range (x8) 3C000h-3FFFFh 3A000h-3BFFFh 38000h-39FFFh 30000h-37FFFh 20000h-2FFFFh 10000h-1FFFFh 00000h-0FFFFh Address Range (x16) 1E000h-1FFFFh 1D000h-1DFFFh 1C000h-1CFFFh 18000h-1BFFFh 10000h-17FFFh 08000h-0FFFFh 00000h-07FFFh Table 4. Bottom Boot Block Addresses M29W200BB # 6 5 4 3 2 1 0 Size (Kbytes) 64 64 64 32 8 8 16 Address Range (x8) 30000h-3FFFFh 20000h-2FFFFh 10000h-1FFFFh 08000h-0FFFFh 06000h-07FFFh 04000h-05FFFh 00000h-03FFFh Address Range (x1.


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