M29W102BT

M29W102BT M29W102BB 1 Mbit (64Kb x16, Boot Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 50ns PROGRAMMING TIME – 10µs per Word typical 5 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 2 Main Blocks s s s s PROGRAM/ERASE CONTROLLER – Embedded Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits TSOP40 (N) 10 x 14mm s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend Figure 1. Logic Diagram s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming VCC s TEMPORARY BLOCK UNPROTECTION MODE LOW POWER CONSUMPTION – Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK M28F102 COMPATIBLE – Pin-out and Read Mode 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29W102BT: 0099h – Bottom Device Code M29W102BB: 0098h A0-A15 W E G RP 16 16 DQ0-DQ15 s s s M29W102BT M29W102BB s s VSS AI02785 March 2000 1/20 M29W102BT, M29W102BB Figure 2. TSOP Connections SUMMARY DESCRIPTION The M29W102B is a 1 Mbit (64Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The memory is ...