1 Mbit 128Kb x8 / Uniform Block Low Voltage Single Supply Flash Memory
M29W010B
1 Mbit (128Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 2.7 to 3.6V ...
Description
M29W010B
1 Mbit (128Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 10µs by Byte typical 8 UNIFORM 16 Kbyte MEMORY BLOCKS PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits
PLCC32 (K) TSOP32 (N) 8 x 20mm
s s
s s
s
ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend
s
UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming LOW POWER CONSUMPTION – Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: 23h
17 A0-A16 W M29W010B E G 8 DQ0-DQ7
s
Figure 1. Logic Diagram
s
VCC
s
s
VSS
AI02747
March 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/19
M29W010B
Figure 2. PLCC Connections Figure 3. TSOP Connections
1 32 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 A14 A13 A8 A9 A11 G A10 E DQ7
A11 A9 A8 A13 A14 NC W VCC NC A16 A15 A12 A7 A6 A5 A4
1
32
9
M29W010B
25
8 9
M29W010B
25 24
17 DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6
16
17
AI02754
G A10 E DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3
A12 A15 A16 NC VCC W NC
AI02748
Table 1. Signal Names
A0-A16 DQ0-DQ7 E G W VCC VSS NC Addre...
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