M29W008AB

M29W008AT M29W008AB 8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory s 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 80ns PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte – Status Register bits and Ready/Busy Output s s s s s s SECURITY PROTECTION MEMORY AREA INSTRUCTIONS ADDRESS CODING: 3 digits MEMORY BLOCKS – Boot Block (Top or Bottom location) – Parameter and Main blocks TSOP40 (N) 10 x 20mm s s BLOCK, MULTI-BLOCK and CHIP ERASE MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend Figure 1. Logic Diagram s s LOW POWER CONSUMPTION – Stand-by and Automatic Stand-by 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M29W008AT: D2h – Bottom Device Code, M29W008AB: DCh G RP VCC s 20 A0-A19 W E M29W008AT M29W008AB 8 DQ0-DQ7 s s RB VSS AI02716 March 2000 1/30 M29W008AT, M29W008AB Figure 2. TSOP Connections Table 1. Signal Names A0-A19 Address Inputs Data Input/Outputs, Command Inputs Chip Enable Output Enable Write Enable Reset/Block Temporary Unprotect Ready/Busy Output Supply Voltage Ground Not Connected Internally A16 A15 A14 A13 A12 A11 A9 A8 W RP NC RB A18 A7 A6 A5 A4 A3 A2 A1 1 40 10 M29W008AT 31 11 M29W008AB 30 20 21 AI02717 A17 VSS NC A19 A10 DQ7 DQ6 DQ5 DQ4 VCC VCC N...