4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory
M29W004BT M29W004BB
4 Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory
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SINGLE 2.7 to 3.6V SUPPLY VO...
Description
M29W004BT M29W004BB
4 Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory
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SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 10µs by Byte typical 11 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 8 Main Blocks
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PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin
TSOP40 (N) 10 x 20mm
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ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend Figure 1. Logic Diagram
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TEMPORARY BLOCK UNPROTECTION MODE UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming LOW POWER CONSUMPTION – Standby and Automatic Standby
A0-A18 W E G RP M29W004BT M29W004BB RB 19 VCC
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8 DQ0-DQ7
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100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code M29W004BT: EAh – Bottom Device Code M29W004BB: EBh
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VSS
AI02954
March 2000
1/20
M29W004BT, M29W004BB
Figure 2. TSOP Connections Table 1. Signal Names
A0-A18 DQ0-DQ7 Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable Reset/Block Temporary Unprotect Ready/Busy Output Supply Voltage Ground Not Connected Internally
A16 A15 A14 A13 A12 A11 A9 A8 W RP NC RB A18 A7 A6 A5 A4 A3 A2 A1
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40
10 M29W004BT 31 11 M29W004BB 30
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21
AI02950
A17 VSS NC NC A10 D...
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