M29W002BB

M29W002BT M29W002BB 2 Mbit (256Kb x8, Boot Block) Low Voltage Single Supply Flash Memory PRELIMINARY DATA s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 10µs by Byte typical 7 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 4 Main Blocks s s s s PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin TSOP40 (N) 10 x 20mm s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend Figure 1. Logic Diagram s TEMPORARY BLOCK UNPROTECTION MODE UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming LOW POWER CONSUMPTION – Standby and Automatic Standby A0-A17 W E G RP M29W002BT M29W002BB RB 18 VCC s s 8 DQ0-DQ7 s 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code M29W002BT: 40h – Bottom Device Code M29W002BB: C2h s s VSS AI02955 March 2000 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/20 M29W002BT, M29W002BB Figure 2. TSOP Connections Table 1. Signal Names A0-A17 DQ0-DQ7 Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable Reset/Block Temporary Unprotect Ready/Busy Output Supply Voltage Ground Not Connecte...