1 Mbit 128Kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory
M29F100BT M29F100BB
1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V±1...
Description
M29F100BT M29F100BB
1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs per Byte/Word typical 5 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 2 Main Blocks
1 44
s s
s
s
PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin
TSOP48 (N) 12 x 20mm
SO44 (M)
s
ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend
Figure 1. Logic Diagram
s
UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE LOW POWER CONSUMPTION – Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – M29F100BT Device Code: 00D0h – M29F100BB Device Code: 00D1h
A0-A15 W E G RP
VCC
s
16
15 DQ0-DQ14 DQ15A–1 M29F100BT M29F100BB BYTE RB
s
s
s
s
VSS
AI02916
July 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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M29F100BT, M29F100BB
Figure 2A. TSOP Connections
A15 A14 A13 A12 A11 A10 A9 A8 NC NC W RP NC NC RB NC NC A7 A6 A5 A4 A3 A2 A1 1 48 NC BYTE VSS DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1...
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