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PFR852S

STMicroelectronics

FAST RECOVERY RECTIFIER DIODES

PFR 850S → 856S FAST RECOVERY RECTIFIER DIODES PRELIMINARY DATASHEET LOW FORWARD VOLTAGE DROP HIGH SURGE CURRENT CAPABI...


STMicroelectronics

PFR852S

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Description
PFR 850S → 856S FAST RECOVERY RECTIFIER DIODES PRELIMINARY DATASHEET LOW FORWARD VOLTAGE DROP HIGH SURGE CURRENT CAPABILITY APPLICATIONS AC-DC POWER SUPPLIES AND CONVERTERS FREE WHEELING DIODES, etc. DESCRIPTION Their high efficiency and high reliability combined with small size and low cost make these fast recovery rectifier diodes very attractive components for many demanding applications. ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol IFRM IF (AV) IFSM Ptot Tstg Tj TL Parameter Repetitive Peak Forward Current Average Forward Current* Surge non Repetitive Forward Current Power Dissipation* Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 10s at 4mm from case tp ≤ 20µs Ta = 90°C δ = 0.5 tp = 10ms Sinusoidal Ta = 90°C DO-201AD (Plastic) Value 100 3 100 3.5 - 40 to + 175 - 40 to + 175 230 Unit A A A W °C °C Symbol VRRM VRSM Parameter 850S Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage 50 75 851S 100 150 PFR 852S 200 250 854S 400 450 856S 600 650 Unit V V THERMAL RESISTANCE Symbol Rth (j - a) Junction-ambient* Parameter Value 25 Unit °C/W * On infinite heatsink with 10mm lead length. August 1996 - Ed: 1 1/3 PFR 850S → 856S ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Synbol IR Tj = 25°C Tj = 100°C VF Tj = 25°C IF = 3A Test Conditions VR = VRRM Min. Typ. Max. 10 250 1.25 V Unit µA RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C VR= 30V IRM Tj = 25°C VR= 30V Test Conditions IF = 1A diF/dt = - 25A/µs IF ...




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