MOS FET Power Amplifier Module for PCS 1900 Handy Phone
PF0415A
MOS FET Power Amplifier Module for PCS 1900 Handy Phone
ADE-208-473C (Z) 4th Edition August 1997 Application
Fo...
Description
PF0415A
MOS FET Power Amplifier Module for PCS 1900 Handy Phone
ADE-208-473C (Z) 4th Edition August 1997 Application
For PCS 1900 class1 1850 to 1910 MHz.
Features
3stage amplifier Small package : 0.2cc High efficiency : 45% Typ High speed switching : 0.9µsec
Pin Arrangement
RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND
G
1
G
G
Absolute Maximum Ratings (Tc = 25°C)
Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 11 3 6 20 –30 to +100 –30 to +100 3 Unit V A V mW °C °C W
PF0415A
Electrical Characteristics (Tc = 25°C)
Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Output power (2) Isolation Switching time Symbol f VAPC I DS ηT 2nd H.D. 3rd H.D. VSWR (in) Pout (1) Pout (2) — tr, tf Min 1850 0.5 — 37 — — — 2.0 1.2 — — Typ — — — 45 –45 –45 1.5 2.4 1.5 –40 0.9 Max 1910 3 100 — –35 –35 3 — — –30 2 Unit MHz V µA % dBc dBc — W W dBm µs Pin = 2 mW, VDD = 4.8 V, VAPC = 3 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 2 mW, VDD = 4.3 V, VAPC = 3 V, RL = Rg = 50 Ω, Tc = 80°C Pin = 2 mW, VDD =4.8 V, VAPC = 0.5 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 2 mW, VDD = 4.8 V, Pout = 1.8 W, RL = Rg = 50 Ω, Tc = 25°C Pin = 2 mW, VDD = 6 V, Ids ≤ 0.9 A (only pulsed), Pout ≤ 1.8 W (at APC controlled), Rg = 50 Ω, t = 20 sec., Tc = 25°C, Output VSWR = 10 : 1 All phases VD...
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