PF00105A

PF00105A MOS FET Power Amplifier Module for AMPS Handy Phone ADE-208-447C (Z) 4th Edition February 1998 Features Low voltage operation : 4.6 V 2 stage amplifier : +8 dBm input Lead less small package : 0.2 cc High efficiency : 48% Typ at 1 W Low power control current : 500 µA Typ Pin Arrangement RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 1 4.5 20 –30 to +100 –30 to +100 2 Unit V A V mW °C °C W PF00105A Electrical Characteristics (Tc = 25°C) Item Frequency range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power Symbol f I DS ηT 2nd H.D. 3rd H.D. VSWR (in) Pout Min 824 — 45 — — — 1.0 Typ — — 48 –40 –40 1.5 1.1 Max 849 20 — –30 –30 3.0 — Unit MHz µA % dBc dBc — W Pin = +8 dBm, V DD = 4.6 V, VAPC = 3 V, RL = Rg = 50Ω, Tc = 25°C Pin = +8 dBm, V DD = 4.6 V, VAPC = 0.1 V, RL = Rg = 50Ω, Tc = 25°C Pin = +8 dBm, V DD = 4.3 to 6 V, Pout ≤ 1.2 W (at APC controlled), Rg = 50 Ω, Tc = 25°C, Output VSWR = 3 : 1 All phases Pin = +8 dBm, V DD = 4.3 to 6 V, Pout ≤ 1.2 W (at APC controlled), Rg = 50 Ω, Tc = 25°C, Output VSWR = 10 : 1 All phases Test Condition — VDD = 7 V, VAPC = 0 V Pin = +8 dBm, V DD = 4.6 V, Pout = 1 W (at APC controlled) RL = Rg = 50Ω, Tc = 25°C Isolation — — –20 +6 dBm...