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PESD3V3L4UW Dataheets PDF



Part Number PESD3V3L4UW
Manufacturers NXP
Logo NXP
Description Low capacitance quadruple ESD protection array
Datasheet PESD3V3L4UW DatasheetPESD3V3L4UW Datasheet (PDF)

PESDxL4UF; PESDxL4UG; PESDxL4UW Low capacitance unidirectional quadruple ESD protection diode arrays Rev. 04 — 28 February 2008 Product data sheet 1. Product profile 1.1 General description Low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to four signal lines from the damage caused by ESD and other transients. Table 1. Product overview Type number Package NXP PESD.

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PESDxL4UF; PESDxL4UG; PESDxL4UW Low capacitance unidirectional quadruple ESD protection diode arrays Rev. 04 — 28 February 2008 Product data sheet 1. Product profile 1.1 General description Low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to four signal lines from the damage caused by ESD and other transients. Table 1. Product overview Type number Package NXP PESD3V3L4UF SOT886 PESD5V0L4UF SOT886 PESD3V3L4UG SOT353 PESD5V0L4UG SOT353 PESD3V3L4UW SOT665 PESD5V0L4UW SOT665 JEITA SC-88A SC-88A - JEDEC MO-252 MO-252 - Package configuration leadless ultra small leadless ultra small very small very small ultra small and flat lead ultra small and flat lead 1.2 Features I ESD protection of up to four lines I Low diode capacitance I Max. peak pulse power: PPP = 30 W I Low clamping voltage: VCL = 12 V I Ultra low leakage current: IRM = 5 nA I ESD protection up to 20 kV I IEC 61000-4-2; level 4 (ESD) I IEC 61000-4-5 (surge); IPP = 2.5 A 1.3 Applications I Computers and peripherals I Audio and video equipment I Cellular handsets and accessories I Communication systems I Portable electronics I Subscriber Identity Module (SIM) card protection NXP Semiconductors PESDxL4UF/G/W Low capacitance unidirectional quadruple ESD protection diode arrays 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Per diode VRWM reverse standoff voltage PESD3V3L4UF PESD3V3L4UG PESD3V3L4UW PESD5V0L4UF PESD5V0L4UG PESD5V0L4UW Cd diode capacitance f = 1 MHz; VR = 0 V PESD3V3L4UF PESD3V3L4UG PESD3V3L4UW PESD5V0L4UF PESD5V0L4UG PESD5V0L4UW Min Typ Max Unit - - 3.3 V - - 5.0 V - 22 28 pF - 16 19 pF 2. Pinning information PESDXL4UF_G_W_4 Product data sheet Table 3. Pinning Pin Description PESD3V3L4UF; PESD5V0L4UF 1 cathode (diode 1) 2 common anode 3 cathode (diode 2) 4 cathode (diode 3) 5 common anode 6 cathode (diode 4) PESD3V3L4UG; PESD5V0L4UG 1 cathode (diode 1) 2 common anode 3 cathode (diode 2) 4 cathode (diode 3) 5 cathode (diode 4) PESD3V3L4UW; PESD5V0L4UW 1 cathode (diode 1) 2 common anode 3 cathode (diode 2) 4 cathode (diode 3) 5 cathode (diode 4) Simplified outline 123 65 bottom view 4 54 123 54 123 Rev. 04 — 28 February 2008 Symbol 16 25 34 006aaa156 15 2 34 006aaa157 15 2 34 006aaa157 © NXP B.V. 2008. All rights reserved. 2 of 17 NXP Semiconductors PESDxL4UF/G/W Low capacitance unidirectional quadruple ESD protection diode arrays 3. Ordering information Table 4. Ordering information Type number Package Name Description PESD3V3L4UF XSON6 PESD5V0L4UF plastic extremely thin small outline package; no leads; 6 terminals; body 1 × 1.45 × 0.5 mm PESD3V3L4UG SC-88A plastic surface-mounted package; 5 leads PESD5V0L4UG PESD3V3L4UW - plastic surface-mounted package; 5 leads PESD5V0L4UW Version SOT886 SOT353 SOT665 4. Marking Table 5. Marking codes Type number PESD3V3L4UF PESD5V0L4UF PESD3V3L4UG PESD5V0L4UG PESD3V3L4UW PESD5V0L4UW [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Marking code[1] A5 A6 L1* L2* A2 A1 Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Per diode PPP peak pulse power tp = 8/20 µs [1][2][3] - IPP peak pulse current tp = 8/20 µs [1][2][3] PESD3V3L4UF - PESD3V3L4UG PESD3V3L4UW PESD5V0L4UF PESD5V0L4UG PESD5V0L4UW - IFSM non-repetitive peak forward square wave; current tp = 1 ms - Max Unit 30 W 3.0 A 2.5 A 3.5 A PESDXL4UF_G_W_4 Product data sheet Rev. 04 — 28 February 2008 © NXP B.V. 2008. All rights reserved. 3 of 17 NXP Semiconductors PESDxL4UF/G/W Low capacitance unidirectional quadruple ESD protection diode arrays Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min IZSM non-repetitive peak reverse square wave; current tp = 1 ms PESD3V3L4UF PESD3V3L4UG PESD3V3L4UW - PESD5V0L4UF PESD5V0L4UG PESD5V0L4UW - PZSM Per device non-repetitive peak reverse square wave; power dissipation tp = 1 ms - Tj Tamb Tstg junction temperature ambient temperature storage temperature −65 −65 Max Unit 0.9 A 0.8 A 6W 150 +150 +150 °C °C °C [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [2] For PESDxL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5. [3] For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2. Table 7. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol Parameter Per diode VESD electrostatic discharge voltage Conditions Min IEC 61000-4-2 (contact discharge) [1][2][3] - MIL-STD-883 (human body model) - [1] Device stressed with ten non-repetitive ESD pulses. [2] For PESDxL4UF measured from pin 1, 3, 4 or 6 to pin 2 or.


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