PESD15VS2UAT

DISCRETE SEMICONDUCTORS DATA SHEET PESDxS2UAT series Double ESD protection diodes in SOT23 package Product specification 2004 Feb 18 Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package FEATURES Unidirectional ESD protection of up to two lines Common-cathode configuration Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A Ultra-low reverse leakage current: IRM < 700 nA ESD protection > 30 kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs. PINNING APPLICATIONS Computers and peripherals Communication systems Audio and video equipment Data lines CAN bus protection. DESCRIPTION Unidirectional double ESD protection diodes in common cathode configuration in the SOT23 plastic package. Designed to protect up to two transmission or data lines against damage from ElectroStatic Discharge (ESD) and other transients. MARKING TYPE NUMBER PESD3V3S2UAT PESD5V0S2UAT PESD12VS2UAT PESD15VS2UAT PESD24VS2UAT Note 1. * = p : made in Hong Kong. * = t : made in Malaysia. * = W : made in China. MARKING CODE(1) *7A *7B *7C *7D *7E 1 PESDxS2UAT series QUICK REFERENCE DATA SYMBOL VRWM Cd PARAMETER reverse stand-off voltage diode capacitance VR = 0 V; f = 1 MHz number of protected lines VALUE 3.3, 5, 12, 15 and 24 UNIT V 207, 152, 38, 32 pF and 23 2 PIN 1 2 3 anode 1 anode 2 DESCRIPTION common cathode 3 1 3 2 2 001aaa401 sym002 Fig.1 Simplified ou...