PEMX1

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMX1 NPN general purpose double transistor Product specification Supersedes data of 2001 Aug 30 2001 Nov 07 Philips Semiconductors Product specification NPN general purpose double transistor FEATURES 300 mW total power dissipation Very small 1.6 mm x 1.2 mm ultra thin package Excellent coplanarity due to straight leads Replaces two SC-75/SC-89 packaged transistors on same PCB area Reduced required PCB area Reduced pick and place costs. handbook, halfpage 6 PEMX1 PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 5 4 APPLICATIONS General purpose switching and amplification. 6 5 4 TR2 TR1 DESCRIPTION NPN double transistor pair in a SOT666 plastic package. PNP complement: PEMT1. MARKING TYPE NUMBER PEMX1 MARKING CODE ZZ Fig.1 Simplified outline (SOT666) and symbol. 1 Top view 2 3 MAM447 1 2 3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per transistor VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Transistor mounted on an FR4 printed-circuit board. total power dissipation Tamb ≤ 25 °C; note 1 − 300 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open emitter open base open collector − − − − − − − −65 −...