PEMT1

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMT1 PNP general purpose double transistor Product specification Supersedes data of 2001 Sep 25 2001 Nov 07 Philips Semiconductors Product specification PNP general purpose double transistor FEATURES 300 mW total power dissipation Very small 1.6 × 1.2 mm ultra thin package Self alignment during soldering due to straight leads Replaces two SC-75/SC-89 packaged transistors on same PCB area Reduced required PCB area Reduced pick and place costs. APPLICATIONS General purpose switching and amplification. 6 5 4 PEMT1 PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 6 5 4 TR2 DESCRIPTION PNP transistor pair in a SOT666 plastic package. NPN complement: PEMX1. MARKING TYPE NUMBER PEMT1 MARKING CODE FF 1 Top view TR1 2 3 MAM450 1 2 3 Fig.1 Simplified outline (SOT666) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per transistor VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Transistor mounted on an FR4 printed-circuit board. total power dissipation Tamb ≤ 25 °C; note 1 − 300 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open emitter open base open collector − − − − − − − −65 − −65 −50 −40 −5 −1...