Document
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMH9 NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
Product specification Supersedes data of 2001 Oct 22 2001 Nov 07
Philips Semiconductors
Product specification
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. DESCRIPTION NPN resistor-equipped transistors in a SOT666 plastic package. MARKING TYPE NUMBER PEMH9 MARKING CODE H9
1
Top view TR1 R2
handbook, halfpage 6
PEMH9
QUICK REFERENCE DATA SYMBOL VCEO ICM TR1 TR2 R1 R2 PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current NPN NPN bias resistor bias resistor MAX. 50 100 − − 10 47 UNIT V mA − − kΩ kΩ
5
4
6
5
4
R1
R2 TR2 R1
2
3
1
MHC049
2
3
Fig.1 Simplified outline (SOT666) and symbol.
2, 5 1, 4
MBK120
6, 3
Fig.2 Equivalent inverter symbol.
2001 Nov 07
2
Philips Semiconductors
Product specification
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per transistor VCBO VCEO VEBO Vi collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Per device Ptot Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering method is reflow soldering. PARAMETER thermal resistance from junction to ambient CONDITIONS notes 1 and 2 VALUE 416 total power dissipation Tamb ≤ 25 °C; note 1 − 300 output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 − − − − − −65 − −65 +40 −10 100 100 200 +150 150 +150 open emitter open base open collector − − − 50 50 10 PARAMETER CONDITIONS MIN.
PEMH9
MAX.
UNIT
V V V V V mA mA mW °C °C °C mW
UNIT K/W
2001 Nov 07
3
Philips Semiconductors
Product specification
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per transistor ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 ------R1 Cc collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage input off voltage input on voltage input resistor resistor ratio collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz VCB = 50 V; IE = 0 VCE = 50 V; IB = 0 VCE = 30 V; IB = 0; Tj = 150 °C VEB = 5 V; IC = 0 VCE = 5 V; IC = 5 mA IC = 5 mA; IB = 0.25 mA VCE = 5 V; IC = 100 µA VCE = 0.3 V; IC = 1 mA − − − − 100 − − 1.4 7 3.7 − − − − − − − 0.7 0.8 10 4.7 − PARAMETER CONDITIONS MIN. TYP.
PEMH9
MAX.
UNIT
100 1 50 150 − 100 0.5 − 13 5.7 2.5
nA µA µA µA mV V V kΩ
pF
2001 Nov 07
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Philips Semiconductors
Product specification
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
PEMH9
103 handbook, halfpage hFE
(1) (2) (3)
MHC070
103 handbook, halfpage VCEsat (mV)
MHC071
102
102
10
(1) (2) (3)
1 10−1
1
10
IC (mA)
102
10 10−1
1
10
IC (mA)
102
VCE = 5 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C.
IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C.
Fig.3
DC current gain as a function of collector current; typical values.
Fig.4
Collector-emitter saturation voltage as a function of collector current; typical values.
handbook, halfpage
2
MHC072
Vi(off) (V)
102 handbook, halfpage Vi(on) (V) 10
MHC073
1.6
1.2
(1) (2)
0.8
(3)
(1)
1
(2) (3)
0.4
0 10−2
10−1
1
IC (mA)
10
10−1 10−1
1
10
IC (mA)
102
VCE = 5 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C.
VCE = 0.3 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C.
Fig.5
Input-off voltage as a function of collector current; typical values.
Fig.6
Input-on voltage as a function of collector current; typical values.
2001 Nov 07
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Philips Semiconductors
Product specification
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
PACKAGE OUTLINE Plastic surface mounted package; 6 leads
PEMH9
SOT666
D
A
E
X
S
Y S HE
6
5
4
pin 1 index A
1
e1 e
2
bp
3
w M A Lp detail X
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1
OUTLINE VERSION SOT666
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 01-01-04 01-08-27
2001 Nov 07
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Philips Semiconductors
Product specification
NPN resistor-equipped transistors; R1 = 10.