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PEMH9 Dataheets PDF



Part Number PEMH9
Manufacturers NXP
Logo NXP
Description NPN/NPN resistor-equipped transistors
Datasheet PEMH9 DatasheetPEMH9 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMH9 NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ Product specification Supersedes data of 2001 Oct 22 2001 Nov 07 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduces requ.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMH9 NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ Product specification Supersedes data of 2001 Oct 22 2001 Nov 07 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. DESCRIPTION NPN resistor-equipped transistors in a SOT666 plastic package. MARKING TYPE NUMBER PEMH9 MARKING CODE H9 1 Top view TR1 R2 handbook, halfpage 6 PEMH9 QUICK REFERENCE DATA SYMBOL VCEO ICM TR1 TR2 R1 R2 PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current NPN NPN bias resistor bias resistor MAX. 50 100 − − 10 47 UNIT V mA − − kΩ kΩ 5 4 6 5 4 R1 R2 TR2 R1 2 3 1 MHC049 2 3 Fig.1 Simplified outline (SOT666) and symbol. 2, 5 1, 4 MBK120 6, 3 Fig.2 Equivalent inverter symbol. 2001 Nov 07 2 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per transistor VCBO VCEO VEBO Vi collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Per device Ptot Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering method is reflow soldering. PARAMETER thermal resistance from junction to ambient CONDITIONS notes 1 and 2 VALUE 416 total power dissipation Tamb ≤ 25 °C; note 1 − 300 output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 − − − − − −65 − −65 +40 −10 100 100 200 +150 150 +150 open emitter open base open collector − − − 50 50 10 PARAMETER CONDITIONS MIN. PEMH9 MAX. UNIT V V V V V mA mA mW °C °C °C mW UNIT K/W 2001 Nov 07 3 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per transistor ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 ------R1 Cc collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage input off voltage input on voltage input resistor resistor ratio collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz VCB = 50 V; IE = 0 VCE = 50 V; IB = 0 VCE = 30 V; IB = 0; Tj = 150 °C VEB = 5 V; IC = 0 VCE = 5 V; IC = 5 mA IC = 5 mA; IB = 0.25 mA VCE = 5 V; IC = 100 µA VCE = 0.3 V; IC = 1 mA − − − − 100 − − 1.4 7 3.7 − − − − − − − 0.7 0.8 10 4.7 − PARAMETER CONDITIONS MIN. TYP. PEMH9 MAX. UNIT 100 1 50 150 − 100 0.5 − 13 5.7 2.5 nA µA µA µA mV V V kΩ pF 2001 Nov 07 4 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PEMH9 103 handbook, halfpage hFE (1) (2) (3) MHC070 103 handbook, halfpage VCEsat (mV) MHC071 102 102 10 (1) (2) (3) 1 10−1 1 10 IC (mA) 102 10 10−1 1 10 IC (mA) 102 VCE = 5 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. Fig.3 DC current gain as a function of collector current; typical values. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. handbook, halfpage 2 MHC072 Vi(off) (V) 102 handbook, halfpage Vi(on) (V) 10 MHC073 1.6 1.2 (1) (2) 0.8 (3) (1) 1 (2) (3) 0.4 0 10−2 10−1 1 IC (mA) 10 10−1 10−1 1 10 IC (mA) 102 VCE = 5 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. VCE = 0.3 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.5 Input-off voltage as a function of collector current; typical values. Fig.6 Input-on voltage as a function of collector current; typical values. 2001 Nov 07 5 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PACKAGE OUTLINE Plastic surface mounted package; 6 leads PEMH9 SOT666 D A E X S Y S HE 6 5 4 pin 1 index A 1 e1 e 2 bp 3 w M A Lp detail X c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1 OUTLINE VERSION SOT666 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 01-01-04 01-08-27 2001 Nov 07 6 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 10.


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