Document
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMH7 NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open
Preliminary specification 2001 Oct 22
Philips Semiconductors
Preliminary specification
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open
FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. DESCRIPTION NPN resistor-equipped transistors in a SOT666 plastic package. MARKING TYPE NUMBER PEMH7 MARKING CODE H3
1
Top view TR1
handbook, halfpage 6
PEMH7
QUICK REFERENCE DATA SYMBOL VCEO ICM TR1 TR2 R1 R2 PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current NPN NPN bias resistor open MAX. 50 100 − − 4.7 − UNIT V mA − − kΩ −
5
4
6
5
4
R1 TR2 R1
2
3
MAM453
1
2
3
Fig.1 Simplified outline (SOT666) and symbol.
2, 5 1, 4
MBK120
6, 3
Fig.2 Equivalent inverter symbol.
2001 Oct 22
2
Philips Semiconductors
Preliminary specification
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per transistor VCBO VCEO VEBO IO ICM Ptot Tstg Tj Tamb Per device Ptot Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering method is reflow soldering. PARAMETER thermal resistance from junction to ambient CONDITIONS notes 1 and 2 VALUE 416 total power dissipation Tamb ≤ 25 °C; note 1 − 300 collector-base voltage collector-emitter voltage emitter-base voltage output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open emitter open base open collector − − − − − − −65 − −65 50 50 5 100 100 200 +150 150 +150 PARAMETER CONDITIONS MIN.
PEMH7
MAX.
UNIT
V V V mA mA mW °C °C °C mW
UNIT K/W
2001 Oct 22
3
Philips Semiconductors
Preliminary specification
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open
CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per transistor ICBO ICEO IEBO hFE VCEsat R1 Cc collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage input resistor collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz VCB = 50 V; IE = 0 VCE = 50 V; IB = 0 VCE = 30 V; IB = 0; Tj = 150 °C VEB = 5 V; IC = 0 VCE = 5 V; IC = 1 mA IC = 5 mA; IB = 0.25 mA − − − − 200 − 3.3 − − − − − 330 − 4.7 − PARAMETER CONDITIONS MIN. TYP.
PEMH7
MAX.
UNIT
100 1 50 100 − 100 6.1 2.5
nA µA µA nA mV kΩ pF
103.