PEMD6

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMD6 NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open Product specification Supersedes data of 2001 Oct 22 2001 Nov 07 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open FEATURES 300 mW total power dissipation Very small 1.6 × 1.2 mm ultra thin package Self alignment during soldering due to straight leads Replaces two SC-75/SC-89 packaged transistors on same PCB area Reduces required PCB area Reduced pick and place costs. APPLICATIONS General purpose switching and amplification Inverter and interface circuits Circuit driver. DESCRIPTION NPN/PNP resistor-equipped transistors in a SOT666 plastic package. MARKING TYPE NUMBER PEMD6 MARKING CODE D6 1 Top view TR1 6 5 PEMD6 QUICK REFERENCE DATA SYMBOL VCEO ICM TR1 TR2 R1 R2 PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current NPN PNP bias resistor open MAX. 50 100 − − 4.7 − UNIT V mA − − kΩ − handbook, halfpage 6 5 4 4 R1 TR2 R1 2 3 1 MHC028 2 3 Fig.1 Simplified outline (SOT666) and symbol. 2, 5 1, 4 MBK120 6, 3 Fig.2 Equivalent inverter symbol. 2001 Nov 07 2 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS − − − − − − − −...