MC-458CB64ESB

DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB64ESB, 458CB64PSB 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC-458CB64ESB and MC-458CB64PSB are 8,388,608 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 4 pieces of 128M SDRAM: µPD45128163 are assembled. These modules provide high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise reduction. Features 8,388,608 words by 64 bits organization Clock frequency and access time from CLK Part number MC-458CB64ESB-A10B /CAS Latency CL = 3 CL = 2 Clock frequency (MAX.) 100 MHz 67 MHz 100 MHz 67 MHz Access time from CLK (MIN.) 7 ns 8 ns 7 ns 8 ns 5 MC-458CB64PSB-A10B CL = 3 CL = 2 Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge Pulsed interface Possible to assert random column address in every cycle Quad internal banks controlled by BA0 and BA1 (Bank Select) Programmable burst-length (1, 2, 4, 8 and Full Page) Programmable wrap sequence (Sequential / Interleave) Programmable /CAS latency (2, 3) Automatic precharge and controlled precharge CBR (Auto) refresh and self refresh Single +3.3 V ± 0.3 V power supply LVTTL compatible 4,096 refresh cycles/64 ms Burst termination by Burst Stop command and Precharge command 144-pin small outline dual in-line memory module ...