MBS4992

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBS4991/D Silicon Bidirectional Switches Diode Thyristors . . . designed for full-wave triggering in Triac phase control circuits, half-wave SCR triggering application and as voltage level detectors. Supplied in an inexpensive plastic TO-226AA package for high-volume requirements, this low-cost plastic package is readily adaptable for use in automatic insertion equipment. Low Switching Voltage — 8 Volts Typical Uniform Characteristics in Each Direction Low On-State Voltage — 1.7 Volts Maximum Low Off-State Current — 0.1 µA Maximum Low Temperature Coefficient — 0.02 %/°C Typical MBS4991 MBS4992 MBS4993 SBS (PLASTIC) MT2 G MT1 MT1 G MT2 CASE 29-04 (TO-226AA) STYLE 12 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Power Dissipation DC Forward Current DC Gate Current (Off-State Only) Repetitive Peak Forward Current (1% Duty Cycle, 10 µs Pulse Width, TA = 100°C) Non-repetitive Forward Current (10 µs Pulse Width, TA = 25°C) Operating Junction Temperature Range Storage Temperature Range Symbol PD IF IG(off) IFM(rep) IFM(nonrep) TJ Tstg Value 500 200 5 2 6 –55 to +125 –65 to +150 Unit mW mA mA Amps Amps °C °C REV 2 Motorola Thyristor Device Data © Motorola, Inc. 1995 1 MBS4991 MBS4992 MBS4993 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Switching Voltage Switching Current MBS4991 MBS4992, MBS4993 MBS4991 MBS4992 MBS4993 MBS4991 MBS4992, MBS4993 MBS4992 MBS49...