MBRS140
SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a ...
MBRS140
SCHOTTKY POWER RECTIFIER General Description:
Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching
regulators & converters. This device offers a low forward voltage performance in a power surface mount package in applications where size and weight are critical. Features: Compact surface mount package with J-bend leads (SMB). 1.5 Watt Power Dissipation package. 1.0 Ampere, forward voltage less than 600 mv Ordering: 13 inch reel (330 mm); 12 mm Tape; 3,000 units per reel.
Absolute Maximum Ratings* Parameter
Storage Temperature Maximum Junction Temperature
TA = 25OC unless otherwise noted
Value
-65 to +150 -65 to +125 40 1.0 2.0 40 12
Units
O O
C C
Repetitive Peak Reverse Voltage (VRRM) Average Rectified Forward Current (TL = 115OC) Average Rectified Forward Current (TL = 100OC) Surge Non Repetitive Forward Current (Half wave, single phase, 60 Hz) Junction to Case for Thermal Resistance (RØJL)
SMB Package (DO-214AA)
V A A A
O
C/W
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
Top Mark: B140
1
2
Electrical Characteristics SYM IR VF
TA = 25OC unless otherwise noted
Actual Size
CHARACTERISTICS Reverse Leakage Current PW 300 us, <2% Duty Cycle Forward Voltage PW 300 us, <2% Duty Cycle
MIN
MAX 1.0 10 550
UNITS mA mA mV
TEST CONDITIONS VR = 40 V; Tj = 25OC VR = 40 V; Tj = 100OC IF...