MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBRP60035CTL/D
POWERTAP™ II SWITCHMODE™ Power Rectifier
...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBRP60035CTL/D
POWERTAP™ II SWITCHMODE™ Power Rectifier
The SWITCHMODE Power Rectifier uses the
Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: Dual Diode Construction — May Be Paralleled for Higher Current Output Guardring for Stress Protection Low Forward Voltage Drop 150°C Operating Junction Temperature Recyclable Epoxy Guaranteed Reverse Avalanche Energy Capability 1 Improved Mechanical Ratings Mechanical Characteristics Case: Epoxy, Molded with metal heatsink base Weight: 80 grams (approximately) Finish: All External Surfaces Corrosion Resistant Top Terminal Torque: 25 – 40 lb–in max Base Plate Torques: See procedure given in the Package Outline Section Shipped 25 units per foam Marking: B60035L MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR) TC = + 100°C Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz) TC = + 100°C Non-repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2 µs, 1 kHz) Storage Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR) Per Leg Per Device Symbol VRRM VRWM VR IF(AV) IFRM IFSM IRRM Tstg TJ dv/dt 2
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