MBRF745

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRF745/D SWITCHMODE™ Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency switching power supplies, free wheeling diodes and polarity protection diodes. Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Epoxy Meets UL94, VO at 1/8″ Electrically Isolated. No Isolation Hardware Required. UL Recognized File #E69369(1) MBRF745 Motorola Preferred Device SCHOTTKY BARRIER RECTIFIER 7.5 AMPERES 45 VOLTS 1 2 1 2 Mechanical Characteristics Case: Epoxy, Molded Weight: 1.9 grams (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: B745 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR), TC = 105°C Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz), TC = 105°C Non–repetitive Peak S...