MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBR6045WT/D
Advance Information SWITCHMODE™ Power Rectif...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBR6045WT/D
Advance Information SWITCHMODE™ Power Rectifier
The SWITCHMODE power rectifier employs the use of the
Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating 45 Volt Blocking Voltage Low Forward Voltage Drop Guardring for Stress Protection and High dv/dt Capability (> 10 V/ns) Guaranteed Reverse Avalanche 150°C Operating Junction Temperature Mechanical Characteristics Case: Epoxy, Molded Weight: 4.3 grams (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 30 Units Per Plastic Tube Marking: B6045
1 2,4 3
MBR6045WT
SCHOTTKY BARRIER RECTIFIER 60 AMPERES 45 VOLTS
1 2 3
CASE 340K–01 TO–247AC
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current — Per Diode (Rated VR) @ TC = 125°C — Per Device Peak Repetitive Forward Current, Per Diode (Rated VR, Square Wave, 20 kHz) @ TC = 90°C Non Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Current (2.0 µs, 1.0 kHz) Operating Junction Temperature Storage Temperature Peak Surge Junction Temperature ...