MBR340

MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features Extremely Low VF Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Low Stored Charge, Majority Carrier Conduction Pb−Free Packages are Available* Mechanical Characteristics: Case: Epoxy, Molded Weight: 1.1 Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Cathode indicated by Polarity Band MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM 40 V VRWM VR Average Rectified Forward Current TA = 65°C IO (RqJA = 28°C/W, P.C. Board Mounting) 3.0 A Non−Repetitive Peak Surge Current (Note 1) IFSM 80 A (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz, TL = 75°C) Operating and Storage Junction Temperature TJ, Tstg −65 to °C Range (Reverse Voltage Applied) (Note 2) +175 THERMAL CHARACTERISTICS Rating Symbol Max Unit Thermal Resistance, Junction−to−Ambient (see Note 5, Mounting Method 3) RqJA 28 °C/W Str...