MBR3100

Axial Lead Rectifier MBR3100 This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features  Low Reverse Current  Low Stored Charge, Majority Carrier Conduction  Low Power Loss/High Efficiency  Highly Stable Oxide Passivated Junction  Guard−ring for Stress Protection  Low Forward Voltage  175C Operating Junction Temperature  High Surge Capacity  Pb−Free Packages are Available* Mechanical Characteristics:  Case: Epoxy, Molded  Weight: 1.1 Gram (Approximately)  Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable  Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds  Polarity: Cathode indicated by Polarity Band MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM 100 V VRWM VR Average Rectified Forward Current TA = 100C IO (RqJA = 28C/W, Refer to P.C. Board Mounting, Note 3) 3.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Operating and Storage Junction Temperature TJ, Tstg −65 to C Range (Note 1) (Reverse Voltage Applied) +175 Voltage Rate of Change (Rated VR) dv/d...