MBR3035PT - MBR3060PT
MBR3035PT - MBR3060PT
Features • • • • • •
Low power loss, high efficiency. High surge capacity. ...
MBR3035PT - MBR3060PT
MBR3035PT - MBR3060PT
Features
Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection.
0.245(6.2) 0.225(5.7) 0.645(16.4) 0.625(15.9) 0.323(8.2) 0.313(7.9)
0.078(1.98) 10° 30° 0.203(5.16) 0.193(4.90)
TO-3P/ TO-247AD
.17(4.3) 0.84(21.3) 0.82(20.8) 0.134(3.4) 0.114(2.9)
10° TYP
BOTH SIDES
1
PIN 1 + PIN 3 CASE PIN 2
0.16(4.1) 0.14(3.5) 0.795(20.2) 0.775(19.7)
2
3
0.086(2.18) 0.076(1.93) 0.127(3.22) 0.117(2.97)
0.118(3.0) 0.108(2.7)
30 Ampere
Schottky Barrier Rectifiers
Absolute Maximum Ratings*
Symbol
IO if(repetitive) if(surge) Average Rectified Current Peak Repetitive Forward Current (Rated VR , Square Wave, 20 KHz) @ TA = 130°C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Lead Storage Temperature Range Operating Junction Temperature
TA = 25°C unless otherwise noted
0.048(1.22) 0.044(1.12) 0.225(5.7) 0.205(5.2)
0.030(0.76) 0.020(0.51)
Dimensions are in: inches (mm)
Parameter
Value
30 30 200 3.0 25 1.4 -65 to +175 -65 to +150
Units
A A A W mW/°C °C/W °C °C
PD RθJL Tstg TJ
*These ratings are limiting values above which the serviceability of any semiconductor devic...