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MTW8N60E

ON Semiconductor

TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM


Description
MTW8N60E Preferred Device Power MOSFET 8 Amps, 600 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy eff...



ON Semiconductor

MTW8N60E

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