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MTW8N60E Dataheets PDF



Part Number MTW8N60E
Manufacturers Motorola
Logo Motorola
Description TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM
Datasheet MTW8N60E DatasheetMTW8N60E Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW8N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW8N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and .

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D7088 MTW8N60E MTW8N60E


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