Silicon Controlled Rectifiers
SemiWell Semiconductor
SCP10C60
Symbol
3. Gate
○ ○
Silicon Controlled Rectifiers
▼
1 23
Features
Repetitive Peak Off...
Description
SemiWell Semiconductor
SCP10C60
Symbol
3. Gate
○ ○
Silicon Controlled Rectifiers
▼
1 23
Features
Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 10 A ) ◆ Low On-State Voltage (1.4V(Typ.)@ ITM) ◆ Non-isolated Type
◆
○
2. Anode
1. Cathode
TO-220
General Description
Standard gate triggering SCR is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system.
Absolute Maximum Ratings
Symbol
VDRM IT(AV) IT(RMS) ITSM I2 t di/dt PGM PG(AV) IFGM VRGM TJ TSTG
( TJ = 25°C unless otherwise specified ) Condition Ratings
600 Half Sine Wave : TC = 111 °C 180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms 6.4 10 110 60 50 5 0.5 2 5.0 - 40 ~ 125 - 40 ~ 150
Parameter
Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Critical rate of rise of on-state current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature
Units
V A A A A2 s A/㎲ W W A V °C °C
Aug, 2003. Rev. 3
1/5
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
SCP10C60
Electrical Characteristics
Symbol Items
VAK = VDRM TC = 25 °C TC = 125 °C ITM = 20 A VAK = 6 V(DC), RL=10 Ω IGT Gate Trigger ...
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