LS842

LS840 LS841 LS842 Linear Integrated Systems FEATURES LOW NOISE LOW LEAKAGE LOW DRIFT LOW OFFSET VOLTAGE LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET en= 8nV/√Hz TYP. IG = 10pA TYP. |∆VGS1-2 /∆T|= 5µV/°C max. IVGS1-2I= 2mV TYP. ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature -65° to +150°C +150°C D1 S1 G1 G2 S2 D2 31 X 32 MILS G1 3 5 S2 D1 2 6 D2 Maximum Voltage and Current for Each Transistor NOTE 1 Gate Voltage to Drain or Source 60V -VGSS -VDSO -IG(f) Drain to Source Voltage Gate Forward Current 60V 50mA 1 S1 7 G2 Maximum Power Dissipation Device Dissipation @ Free Air - Total BOTTOM VIEW 400mW @ +125°C ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS840 LS841 LS842 UNITS 5 10 40 µV/°C |∆VGS1-2 /∆T| max. Drift vs. Temperature |VGS1-2| max. SYMBOL BVGSS BVGGO Yfss Yfs |Yfs1-2/Yfs| IDSS |IDSS1-2/IDSS| VGS(off) or VP VGS -IG -IG -IG -IGSS Offset Voltage CHARACTERISTICS Breakdown Voltage Gate-to-Gate Breakdown TRANSCONDUCTANCE Full Conduction Typical Conduction Mismatch DRAIN CURRENT Full Conduction Mismatch at Full Conduction GATE VOLTAGE Pinchoff Voltage Operating Range GATE CURRENT Operating High Temperature Reduced VDG At Full Conduction ----10 -5 -50 50 -100 pA nA pA pA 1 0.5 2 -4.5 4 V V 0.5 -2 1 5 5 mA % 1000 500 -0.6 4000 1000 3 µmho µmho % 5 MIN. 60 60 10 TYP. --25 MAX. --mV UNITS V V CONDITIONS VDG= 20V VD...