LS830

LS830 LS831 LS832 LS833 Linear Integrated Systems FEATURES ULTRA LOW DRIFT ULTRA LOW LEAKAGE LOW NOISE LOW CAPACITANCE |∆VGS1-2 /∆T|= 5µV/°C max. IG = 80fA TYP. en= 70nV/√Hz TYP. CISS= 3pf MAX. ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature -65° to +150°C +150°C D1 S1 G2 G1 3 5 S2 Maximum Voltage and Current for Each Transistor NOTE 1 Gate Voltage to Drain or Source 40V -VGSS -VDSO -IG(f) -IG Drain to Source Voltage Gate Forward Current Gate Reverse Current 40V 10mA 10µA D1 2 D2 6 D2 1 S1 7 G2 G1 S2 BOTTOM VIEW 22 X 20 MILS Maximum Power Dissipation Device Dissipation @ Free Air - Total 40mW @ +125°C LS833 75 25 0.5 0.5 1.0 1.0 UNITS µV/°C mV pA nA pA nA ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS830 LS831 LS832 5 10 20 |∆VGS1-2 /∆T| max. Drift vs. Temperature |VGS1-2| max. -IG max -IG max -IGSS -IGSS Offset Voltage Operating High Temperature At Full Conduction High Temperature 25 0.1 0.1 0.2 0.5 25 0.1 0.1 0.2 0.5 25 0.1 0.1 0.2 0.5 CONDITIONS VDG= 10V VDG= 10V TA= +125°C VGS= 0 TA= +125°C TA= -55°C to +125°C ID= 30µA ID= 30µA VGS= -20V SYMBOL BVGSS BVGGO Yfss Yfs |Yfs1-2/Yfs| IDSS |IDSS1-2/IDSS| VGS(off) or VP VGS IGGO CHARACTERISTICS Breakdown Voltage Gate-to-Gate Breakdown TRANSCONDUCTANCE Full Conduction Typical Operation Mismatch DRAIN CURRENT Full Conduction Mi...