LS627

LS627 Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR CRYSTALONICS FF627 FLAT GLASS TOP FOR EXTERNAL OPTICS ULTRA HIGH SENSITIVITY ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Currents Gate Current Maximum Voltages Drain to Source Drain to Gate Gate to Source 15V 15V -10V 50mA 400mW -65 to +200 °C -55 to +165 °C PHOTO FET LIGHT SENSITIVE JFET TO-72 BOTTOM VIEW D 2 3 G S 1 4 C ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL VGS(off) SG SD λIg λId IDSS IGSS gfs RDS(on) CGS CGD tr tf CHARACTERISTIC Gate to Source Cutoff Voltage (VPO) Gate Sensitivity2 Drain Sensitivity 3 4 4 MIN 1.0 6.4 TYP MAX 5.0 24 UNITS V µA/mW/cm2 mA/mW/cm 2 CONDITIONS VDS = 10V, ID = 0.1µA VDS = 10V, VGS = 0V, λ = 0.9µm VDS = 10V, VGS = 0V, RG = 1MΩ VDS = 10V, VGS = 0V VDS = 10V, VGS = 0V, RG = 1MΩ VDS = 10V, VGS = 0V VGS = -10V, VDS = 0V VDS = 10V, VGS = 0V, f = 1kHz VDS = 0.1V, VGS = 0V VGS = -10V, f = 140kHz VGD = -10V, f = 140kHz VDS = 10V, RL = RG = 100Ω 500 10 800 8.0 30 8000 100 35 20 30 50 37.5 Gate Current (Light) nA/FC µA/FC mA pA µS Ω pF ns Drain Current (Light) Drain Saturation Current Gate Leakage Current (Dark) Forward Transconductance (gm) Drain to Source On Resistance Gate to Source Capacitance Gate to Drain Capacitance Rise Time5 Fall Time6 Linear Integrated Systems 4042 Clipper Court Frem...